1 edition 1.5 august 2004 FLM1414-6F x, ku-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 31.2 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 26.0 and -2.8 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 2800 4200 -0.5 -1.5 -3.0 36.5 37.5 - 6.0 6.5 - v ds = 5v, i ds = 120ma v ds = 5v, i ds = 1800ma v ds = 5v, v gs = 0v i gs = -120 a v ds = 10v, i ds = 0.6 i dss (typ.), f = 14.0 ~ 14.5 ghz, z s = z l = 50 ? ma v - 2350 - ms -5.0 - - v db dbm g m v p v gso p 1db g 1db drain current - 1800 2100 ma i dsr power-added efficiency -24- % add thermal resistance channel to case - 4.0 4.5 c/w case style: ia r th test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) g.c.p.: gain compression point, s.c.l.: single carrier level gain flatness -- 0.6 db ? g 3rd order intermodulation distortion f = 14.5ghz, ? f = 10mhz 2-tone test pout = 26.5dbm s.c.l. -44 -46 - dbc im 3 10v x i dsr x r th channel temperature rise -- 80 c ? t ch features ?high output power: p 1db = 37.5dbm (typ.) ?high gain: g 1db = 6.5db (typ.) ?high pae: add = 26% (typ.) ?low im 3 = -46dbc@po = 26.5dbm (typ.) ?broad band: 14.0 ~ 14.5ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed description the FLM1414-6F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance.
output power vs. frequency 14.0 pin=32dbm 30dbm 28dbm 26dbm 14.1 14.2 14.3 14.4 14.5 frequency (ghz) 34 36 38 output power (dbm) v ds = 10v p 1db v ds =10v f = 14.25 ghz output power vs. input power 24 26 28 30 32 34 input power (dbm) 30 32 34 36 38 40 30 15 output power (dbm) add p out add (%) 2 FLM1414-6F x, ku-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( c) 40 30 20 10 total power dissipation (w) output power & im 3 vs. input power v ds =10v f1 = 14.5 ghz f2 = 14.51 ghz 2-tone test 18 16 22 20 26 24 28 input power (s.c.l.) (dbm) s.c.l.: single carrier level output power (s.c.l.) (dbc) -20 -30 -40 -50 30 28 26 32 34 24 im 3 (dbc) im 3 p out
3 FLM1414-6F x, ku-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.2 0.1 12345 250 100 50 ? 13.8 ghz 13.8 ghz 13.9 14.7 14.5 14.4 14.2 14.2 14.0 14.0 13.8 ghz 13.9 13.8 ghz 14.7 14.7 14.5 14.6 14.4 14.4 14.5 14.2 14.1 14.2 14.3 14.0 14.0 10 14.7 14.5 25 s-parameters v ds = 10v, i ds = 1800ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 13800 .352 44.6 2.067 152.2 .131 126.8 .446 -5.2 13900 .311 30.4 2.131 142.1 .137 116.6 .418 -17.7 14000 .275 17.0 2.088 129.4 .139 106.4 .417 -31.6 14100 .246 -2.2 2.118 119.7 .144 97.7 .392 -39.2 14200 .219 -21.6 2.081 107.7 .148 87.0 .365 -49.0 14300 .197 -42.4 2.059 96.7 .144 75.5 .334 -55.8 14400 .185 -63.6 1.995 85.9 .148 64.6 .305 -62.5 14500 .164 -83.0 1.918 75.2 .146 56.1 .266 -67.1 14600 .158 -101.6 1.839 65.8 .145 46.2 .237 -70.2 14700 .158 -119.1 1.791 57.2 .143 36.9 .219 -74.8
4 FLM1414-6F x, ku-band internally matched fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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